九洲酷游·BET9

九洲科技股份有限公司
Ion Wave 10 Gas Plasma System

Ion Wave 10 Gas Plasma System

ION WAVE 10 批次等離子系統

與射頻等離子體相比，微波會產生更高密度的等離子體（離子/基團）和更低的基板感應偏壓。由於這一事實，預計微波等離子體中光刻膠的灰化率更高，等離子體損傷更低。IoN Wave 10 等離子系統專為研發和小規模生產應用而設計。PVA TePla 是一種經過驗證且值得信賴的全球資源，可提供高質量、可靠、經濟高效且易於操作的氣體等離子系統。它為各種應用提供了一些最先進和創新的解決方案。

典型應用

  • 光刻膠灰化和除渣
  • 在較低溫度下去除 SU-8
  • 鈍化層蝕刻
  • 設備解封
  • 表面清潔
  • 表面活化

功能包括：

  • 小腳印桌面設計
  • 即插即用自安裝
  • 帶液晶觸摸屏和鍵盤的工業計算機。基於 Windows 的操作系統
  • 圖形用戶界面 (GUI) 軟件符合 CFR Title 21 Part 11 和 Semi E95-1101
  • 多級用戶訪問
  • 軟件
    • 用於快速和多功能步驟控制的配方編輯器
    • 板載診斷功能和報警記錄
    • 通過以太網進行遠程過程監控
    • 基於網絡的在線模擬/培訓/支持

PROCESS CHAMBER

  • Material: Quartz chamber
  • Dimension: 248 mm D x 244 mm L (9.76” x9.60”)
  • Volume: 11.76 L (0.42 ft3)
  • Chamber opening: 241 mm at seal plate
  • Number of MFCs: 1
  • Process Pressure: (0.5 to 1.5) mbar
  • (375 to 1125) mTorr)
  • Base Pressure: 0.07 mbar (50 mTorr)
  • Pumping Time: 1 min (Pump dependent)
  • Wafer Sizes: Up to 200 mm (8”)
  • Batch size (Boat): 25 wafers of diameter 150 mm (6”)
  • Batch size (Plate): 1 wafer of diameter 200 mm (8”)
  • Wafer Loading: Manual

PLASMA GENERATOR

  • Microwave frequency/power: 2.45
  • GHz/1000 W

OPTIONS

  • Step-up transformer (115 VAC to 230 VAC)
  • Automated robotic loading/unloading
  • Ceramic chamber and chemical resistant seals
  • Secondary plasma
    • Faraday/Etch tunnel
  • Additional MFCs/up to additional five gasses
  • Endpoint Detection
    • Single wavelength
    • Spectrographic
  • Recirculation liquid chiller and Temperature controlled plate
  • Process pressure control
  • Light tower with R/Y/G/Buzzer
  • Barcode scanner; RGA; Printer
  • Gas (H2, N2, O2) generator package
  • Vacuum pumps (Rotary vane, dry)
  • SECS/GEM Interface

MACHINE DIMENSION AND WEIGHT:

  • 737 mm W x 663 mm D x 711 mm H (29”x26.1”x28”)
  • 134 kg (295 lb) (Varies with options)

PERFORMANCE DATA

  • Uptime: 95%
  • MTBF: >500 h
  • MTTR: <2 h

FACILITIES REQUIREMENTS

  • Electricity: 230 VAC, 1f, 50/60 Hz, 3 wire, 4.8 kW
  • Process Gas Input Pressure: 2 bar (30 psi)
  • Purge Gas Input Pressure: 2 bar (30 psi)
  • Compressed Air Input Pressure: 6 bar (88 psi)

SAFETY CERTIFICATION STANDARDS

  • CE certified
  • EN 61010
  • EN 61326

Technical Data

PROCESS CHAMBER

  • Material: Quartz chamber
  • Dimension: 248 mm D x 244 mm L (9.76” x9.60”)
  • Volume: 11.76 L (0.42 ft3)
  • Chamber opening: 241 mm at seal plate
  • Number of MFCs: 1
  • Process Pressure: (0.5 to 1.5) mbar
  • (375 to 1125) mTorr)
  • Base Pressure: 0.07 mbar (50 mTorr)
  • Pumping Time: 1 min (Pump dependent)
  • Wafer Sizes: Up to 200 mm (8”)
  • Batch size (Boat): 25 wafers of diameter 150 mm (6”)
  • Batch size (Plate): 1 wafer of diameter 200 mm (8”)
  • Wafer Loading: Manual

PLASMA GENERATOR

  • Microwave frequency/power: 2.45
  • GHz/1000 W

Technical Data

OPTIONS

  • Step-up transformer (115 VAC to 230 VAC)
  • Automated robotic loading/unloading
  • Ceramic chamber and chemical resistant seals
  • Secondary plasma
    • Faraday/Etch tunnel
  • Additional MFCs/up to additional five gasses
  • Endpoint Detection
    • Single wavelength
    • Spectrographic
  • Recirculation liquid chiller and Temperature controlled plate
  • Process pressure control
  • Light tower with R/Y/G/Buzzer
  • Barcode scanner; RGA; Printer
  • Gas (H2, N2, O2) generator package
  • Vacuum pumps (Rotary vane, dry)
  • SECS/GEM Interface

Technical Data

MACHINE DIMENSION AND WEIGHT:

  • 737 mm W x 663 mm D x 711 mm H (29”x26.1”x28”)
  • 134 kg (295 lb) (Varies with options)

PERFORMANCE DATA

  • Uptime: 95%
  • MTBF: >500 h
  • MTTR: <2 h

FACILITIES REQUIREMENTS

  • Electricity: 230 VAC, 1f, 50/60 Hz, 3 wire, 4.8 kW
  • Process Gas Input Pressure: 2 bar (30 psi)
  • Purge Gas Input Pressure: 2 bar (30 psi)
  • Compressed Air Input Pressure: 6 bar (88 psi)

SAFETY CERTIFICATION STANDARDS

  • CE certified
  • EN 61010
  • EN 61326